发明名称 |
Method to remove copper contamination by using downstream oxygen and chelating agent plasma |
摘要 |
A method of removing copper contamination from a semiconductor wafer, comprising the following steps. A semiconductor wafer having copper contamination thereon is provided. An oxidizing radical containing downstream plasma is provided from a first source (alternatively halogen (F2, Cl2, or Br2) may be used as on oxidizing agent). A vaporized chelating agent is provided from a second source. The oxidizing radical containing downstream plasma and vaporized chelating agent are mixed to form an oxidizing radical containing downstream plasma/vaporized chelating agent mixture. The mixture is directed to the copper contamination so that the mixture reacts with the copper contamination to form a volatile product. The volatile product is removed from the proximity of the wafer.
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申请公布号 |
US6350689(B1) |
申请公布日期 |
2002.02.26 |
申请号 |
US20010839962 |
申请日期 |
2001.04.23 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
HO PAUL;CHOOI SIMON;ALIYU YAKUB;ZHOU MEI SHENG;SUDIJONO JOHN;GUPTA SUBHASH;ROY SUDIPTO RANENDRA;XU YI |
分类号 |
H01L21/02;H01L21/306;H01L21/321;H01L21/3213;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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