发明名称 |
Spacer etch method for semiconductor device |
摘要 |
Spacers are formed on a semiconductor device by depositing a spacer layer on the semiconductor device. The semiconductor device is subjected to an anisotropic etching process to leave at least a portion of the spacer layer covering the semiconductor device. The semiconductor device is then subjected to an isotropic etching process to form the spacers on the semiconductor device.
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申请公布号 |
US6350696(B1) |
申请公布日期 |
2002.02.26 |
申请号 |
US20000671209 |
申请日期 |
2000.09.28 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SHIELDS JEFFREY A.;ERHARDT JEFFREY P. |
分类号 |
H01L21/311;H01L21/336;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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