| 摘要 |
PURPOSE: A method for fabricating a semiconductor laser diode is provided, which forms a P type electrode stably and simplifies the fabrication process by forming a passivation layer with a self-alignment method. CONSTITUTION: According to the method, a buffer layer(34), the first clad layer(36), the first waveguide layer(38), an active layer(40), the second waveguide layer(42), the second clad layer(44) and a cap layer(46) are formed in sequence on a substrate(32). And an etching mask is formed on the cap layer. The cap layer and the second clad layer are patterned in sequence using the etching mask so that a ridge(50) is formed by etching the second clad layer not to reveal the second waveguide layer. And a passivation layer(54) covering a side of the cap layer and the second clad layer patterned in a ridge structure is formed using the etching mask. And a P type electrode(56) contacting with the cap layer is formed on the passivation layer after removing the etching mask.
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