METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to remarkably increase capacitance by making both surfaces of a storage electrode embossed so that the surface area of the storage electrode is almost doubled. CONSTITUTION: A sacrificial layer is formed on an interlayer dielectric having a contact(126). The sacrificial layer is patterned to form at least one hole. A nitride layer is formed on the interlayer dielectric exposed by the hole, the contact, the sidewall of the sacrificial layer and the sacrificial layer. Grains of a hot temperature oxide(HTO) embossing type are formed on the nitride layer. The HTO embossed grains formed on the exposed interlayer dielectric and the contact are eliminated. Phosphorous-doped polysilicon is deposited on the resultant structure to form a polysilicon layer. After a passivation layer is formed on the polysilicon layer, a chemical mechanical polishing(CMP) process is performed to expose the sacrificial layer. The passivation layer and the sacrificial layer are removed to form a storage node(140). A dielectric layer(142) is formed on the storage node. A plate electrode(144) is formed on the dielectric layer.