| 发明名称 |
Dense arrays and charge storage devices, and methods for making same |
| 摘要 |
There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing. |
| 申请公布号 |
AU8643201(A) |
申请公布日期 |
2002.02.25 |
| 申请号 |
AU20010086432 |
申请日期 |
2001.08.13 |
| 申请人 |
MATRIX SEMICONDUCTOR, INC. |
发明人 |
THOMAS H LEE;VIVEK SUBRAMANIAN;JAMES M. CLEEVES;ANDREW J. WALKER;CHRISTOPHER PETTI;IGOR G. KOUZNETZOV;MARK G. JOHNSON;PAUL M. FARMWALD;BRAD HERNER |
| 分类号 |
H01L21/20;H01L21/336;H01L21/822;H01L21/8246;H01L21/8247;H01L27/06;H01L27/10;H01L27/112;H01L27/115;H01L27/12;H01L29/423;H01L29/786;H01L29/788;H01L29/792;H01L29/861 |
主分类号 |
H01L21/20 |
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