| 摘要 |
PURPOSE: A method for forming a gate insulation layer of a semiconductor device is provided to eliminate the need to repeat an oxide process and an etch process for etching the oxide layer, by forming a nitride thin film in a region for a low voltage transistor and by oxidizing the resultant structure of a semiconductor substrate. CONSTITUTION: A high voltage transistor region and a low voltage transistor region are confined in a semiconductor substrate(21). The nitride thin film is selectively formed in the low voltage transistor region of the semiconductor substrate. The resultant structure of the semiconductor substrate is oxidized to form gate insulation layers(24a,24b) having different thicknesses.
|
