METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to improve a characteristic and reliability, by preventing a lifting phenomenon of a storage electrode having a three-dimensional structure such that the lifting phenomenon occurs in removing a sacrificial insulation layer. CONSTITUTION: A bit line(17) is formed on a lower insulation layer(13) having the first contact plug(15). The second contact plug(19) coupled to the first contact plug is formed by using a storage electrode contact mask. An interlayer dielectric(21) and the sacrificial insulation layer are stacked on the entire surface. The sacrificial insulation layer and the interlayer dielectric are etched by using a contact mask larger than the storage electrode contact mask to form a trench between the second contact plug and the interlayer dielectric. Polysilicon(25) filling the trench is formed on the entire surface. A conductive layer(27) for the storage electrode is formed on the polysilicon. The conductive layer for the storage electrode and the polysilicon are planarization-etched to eliminate the exposed sacrificial insulation layer.