| 摘要 |
PURPOSE: A method for forming an image sensor is provided to prevent a cross talk between unit pixels as well as individual transistors by forming a device on an epitaxial silicon layer separated by a thick oxide layer, and to prevent an area of an active region from being reduced by a bird's beak by eliminating a process for forming a filed oxide layer. CONSTITUTION: An insulation layer is formed on a semiconductor substrate(30). An etch mask covering an isolation region is formed on the insulation layer. The insulation layer not covered with the etch mask is selectively etched to form an insulation layer pattern for an isolation between pixels while the semiconductor substrate is exposed. The etch mask is removed. The epitaxial semiconductor layer(32) forming the active region is formed on the exposed semiconductor substrate. The image sensor including an optical sensing unit, a signal transfer unit and a signal process unit is formed on the active region.
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