| 摘要 |
PURPOSE: A method for forming a metal interconnection of a semiconductor device is provided to guarantee a sufficient align margin of a photolithography process of a local interconnection layer and a contact hole, by forming the local interconnection layer before the contact hole is etched. CONSTITUTION: A plurality of gate lines(33) are formed on a semiconductor substrate(31). A source/drain(36) is formed in the semiconductor substrate by an impurity ion implantation process using the gate line as a mask. An etch stop layer(38) and a metal layer for a local interconnection(39a) are sequentially formed on the entire surface including the gate line. The metal layer is selectively etched to form the local interconnection for a subsequent gate line and a subsequent source/drain. An interlayer dielectric(40) is formed on the local interconnection. The interlayer dielectric, the local interconnection and the etch stop layer are selectively etched to form a contact hole for connecting the gate line with the source/drain. A metal interconnection(41) is filled in the contact hole, connected to the local interconnection to electrically connect the source/drain with the gate line.
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