| 摘要 |
PURPOSE: A method for forming a capacitor electrode using a hard mask is provided to form an electrode of a vertical type, by etching a Pt layer while using a Ru layer as the hard mask or a Pt layer, Ir layer or IrO2 layer as the hard mask. CONSTITUTION: The Pt layer(15) to constitute a lower electrode is formed. A Ru hard mask(16A) is formed on the Pt layer. The Pt layer not covered with the Ru hard mask is selectively etched to form a Pt lower electrode. A dielectric layer and an upper electrode are formed on the Pt lower electrode and the Ru hard mask.
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