| 摘要 |
PURPOSE: A method for forming a titanium silicide layer is provided to prevent a silicon substrate from being etched by chlorine included in TiCl4 as source gas for depositing the titanium silicide layer, by performing a process for forming a thin nitride layer during the deposition process of the titanium silicide layer. CONSTITUTION: The titanium silicide layer is formed on the silicon substrate(100) by a chemical vapor deposition(CVD) method, wherein the thickness of the titanium silicide layer is 1/n as thick as a titanium silicide layer to be ultimately fabricated. The nitride layer is formed on the titanium silicide layer. The mentioned processes are repeated by n times until the titanium silicide layer of a desired thickness is formed.
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