METHOD FOR FORMING SEMICONDUCTOR DEVICE USING SHALLOW TRENCH ISOLATION PROCESS

摘要

PURPOSE: A method for forming a semiconductor device using a shallow trench isolation process is provided to planarize a trench isolation layer and to basically prevent residue in a process for etching a gate, by performing an etch-back process using a sacrificial planarization layer after the trench isolation layer is formed. CONSTITUTION: A shallow trench isolation process is performed regarding a semiconductor substrate(20) to form the trench isolation layer(21). The sacrificial planarization layer is formed on the resultant structure having the trench isolation layer. The sacrificial planarization layer and the trench isolation layer are etched back to planarize the trench isolation layer. A gate oxide layer and a gate conductive layer are formed on the resultant structure.