| 摘要 |
PURPOSE:To ensure stability of a voltage of a counter electrode, to prevent breakdown of stored data and to improve yield by making a part which becomes a contact hole which is finally formed for realizing connection between a bit line and an N-type diffusion layer remain as a high resistor layer without realiz ing low resistance thereof. CONSTITUTION:A resist 20 is formed on a region 19 wherein a contact hole 16 which is formed for realizing connection between a bit line and an N-type diffusion layer 8 is formed, ion implantation is performed for N-type impurities to a polysilicon layer 14 by using it as a mask and a counter electrode 4 is formed by realizing low resistance of a part excepting a part 15A coated with the resist 20 of a polysilicon layer 15. Thereby, in a process for forming the contact hole 16, even when the contact hole 16 is not formed because of etching failure, stability of a voltage of the counter electrode 4 can be ensured and yield can be improved since breakdown of stored data can be avoided. |
