| 摘要 |
PURPOSE: To enable the chip area to be reduced by providing bumps on active parts whereto the current of a semiconductor substrate is supplied through the intermediary of a soft insulating film. CONSTITUTION: Bumps 14, 15 are provided on active regions whereto the current of a semiconductor substrate 18 is supplied through the intermediary of a soft insulating film 8. For example, a p-type base diffused region 3 is formed on the surface layer of an n-type semiconductor substrate 18 and an n-type emitter region 4 is formed on the surface of said region 3. Besides, the surface of the semiconductor substrate 18 is covered with an oxide film 2 while an Al electrode 7 is in contact with the regions 3 and 4 through a base aperture part 5 and an emitter aperture part 6. Furthermore, a polyimide made insulating film 8 is formed on the Al electrode 7 as well as a base bump 14 and an emitter bump 15 made of solder are formed on the insulating film 8 through the intermediary of an underlying metallic films 9. In such a constitution, the Al electrode 7 is in contact with the base bump 14 and the emitter bump 15 respectively using a base contact part 16 and an emitter contact part 17. |
