发明名称 |
SELECTIVE EPITAXIAL GROWTH METHOD |
摘要 |
PROBLEM TO BE SOLVED: To provide a selective epitaxial growth method for improving growth selectivity and at the same time improving growth speed. SOLUTION: In this growth method, a process for successively injecting source, etching, and reduction gases into a chamber where a semiconductor substrate is loaded is repeatedly performed.
|
申请公布号 |
JP2002057115(A) |
申请公布日期 |
2002.02.22 |
申请号 |
JP20010224800 |
申请日期 |
2001.07.25 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
PARK JUNG-WOO;YOO JONG-RYUL;HA JUNG-MIN;SAI JIEI |
分类号 |
C23C16/04;H01L21/20;H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
C23C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|