| 摘要 |
PROBLEM TO BE SOLVED: To provide an active matrix substrate in which a forming process of picture element electrodes is shortened, exposure precision is improved by self-alignment, and leakage failure between picture element electrodes can be prevented. SOLUTION: In an active matrix substrate where TFTs 14 are formed in a matrix type, a gate signal line 12 and capacitance wiring 27 are formed on a transmissive substrate 21, and a semiconductor layer 24 and source drain electrodes 26a, 26b which are isolated to the right and the left by a channel protecting film 25 are formed sequentiably on a gate insulating film 23 covering the gate signal line 12 and the capacitance wiring 27, thereby forming the TFT 14. The whole part of the substrate 21 is covered with an inter layer insulating film 28, on which a picture element electrode 1 connected with the TFT 14 via a contact hole 16 penetrating the interlayer insulating film is formed. The picture element electrode 1 is formed by spreading photosensitive transparent resin on the interlayer insulating film 28, exposing the resin to a fight from the rear and developing it. As the resin, negative acrylic polymer resin or the like containing ITO, ATO or ZnO is used. |
