METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR HAVING REDUCED RESISTANCE BETWEEN SOURCE AND DRAIN AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A metal oxide semiconductor field effect transistor(MOSFET) is provided to reduce resistance in a channel region between a source extension region and a drain extension region by decreasing the length of a gate electrode. CONSTITUTION: A semiconductor substrate is prepared. The gate electrode(220) is formed on the semiconductor substrate(200). Deep source/drain regions(230) are formed on the semiconductor substrate outside the sidewall of the gate electrode. Source/drain extension regions(240) extend toward the channel region under the gate electrode, thinner than the deep source/drain regions on the semiconductor substrate. The first silicide layer of the first thickness is formed on the deep source/drain regions. The second silicide layer extends from the first silicide layer on a partial surface of the source/drain extension region, having the second thickness smaller than the first thickness of the first silicide layer.