| 摘要 |
PROBLEM TO BE SOLVED: To form the device of a radio frequency in the die of an integrated circuit by using a CMOS manufacturing process. SOLUTION: An RF circuit is formed on triple wells (42, 44 and 46), forming two junction parts (66b and 66c) which are reverse biased. Capacitance (67) across the junction parts is reduced by adjusting the bias added to the junction parts (66b and 66c). Capacitive coupling to the substrate from the RF circuit is reduced. The self-resonance frequency of an inductor (62) is improve, and the coupling of unwanted signals and noise from the underlying substrata (42) to an active circuit element and a passive element, such as a capacitor and the inductor, can be reduced. |
