| 摘要 |
PURPOSE: A method for fabricating a solid state image device is provided to balance the color of an overall charge coupled device by decreasing transmittance of a short wavelength band. CONSTITUTION: A photodiode region(1) and a charge transfer and polygate region are formed in a substrate. A masking metal layer, an insulation layer and a planarization layer are formed on the charge transfer and polygate region. A color filter layer(5,6,7) is formed on the planarization layer. A yellow layer is deposited on a part of the planarization layer and on the entire surface of the color filter layer. A top coating layer(8) for planarization is formed on the substrate including the resultant structure. A photoresist layer is deposited on the top coating layer for planarization. The photoresist layer is so patterned to be left only on a portion corresponding to the photodiode region. A heat treatment process is performed on the patterned photoresist layer to form a micro lens(9) without an ultraviolet(UV) exposure process.
|
