| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a wasteful power consumption is reduced without narrowing the range of a resistance value of a load which is to be driven while the variation in an output voltage caused by the resistance value of a load is reduced. SOLUTION: An NPN transistor 4 is provided where a base is connected to an input side of a current amplifier circuit 2 which amplifies an input current to supply it to the base of a transistor 3 at an output stage, an emitter is connected to a ground, and a collector is connected to an output terminal OUT, with a structure comprising a parasitic PNP transistor 5.
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