发明名称 SEMICONDUCTOR STORAGE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor storage having its performance compensation function. SOLUTION: This semiconductor storage is provided with a step-down voltage generation circuit which drops the power voltage supplied from an external terminal and generates the operating voltage of a memory circuit. Then the voltage of the step-down voltage generation circuit is heightened in an allowable range of voltage of the memory circuit when the detected operating speed of the memory circuit is lower than a desired level.
申请公布号 JP2002056672(A) 申请公布日期 2002.02.22
申请号 JP20000236779 申请日期 2000.08.04
申请人 HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD 发明人 EGAWA HIDEKAZU;KAMEI TAKAO;SHIMIZU YUSUKE
分类号 G11C11/407;(IPC1-7):G11C11/407 主分类号 G11C11/407
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