发明名称 |
SEMICONDUCTOR STORAGE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage having its performance compensation function. SOLUTION: This semiconductor storage is provided with a step-down voltage generation circuit which drops the power voltage supplied from an external terminal and generates the operating voltage of a memory circuit. Then the voltage of the step-down voltage generation circuit is heightened in an allowable range of voltage of the memory circuit when the detected operating speed of the memory circuit is lower than a desired level.
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申请公布号 |
JP2002056672(A) |
申请公布日期 |
2002.02.22 |
申请号 |
JP20000236779 |
申请日期 |
2000.08.04 |
申请人 |
HITACHI LTD;HITACHI ULSI SYSTEMS CO LTD |
发明人 |
EGAWA HIDEKAZU;KAMEI TAKAO;SHIMIZU YUSUKE |
分类号 |
G11C11/407;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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