| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single-crystal substrate for inhibiting the generation of cracks in the gallium nitride film when separating the gallium nitride film from a sapphire substrate. SOLUTION: The method includes a stage for forming a gallium nitride film on a sapphire substrate, a stage for heating the sapphire substrate within a range of 600 deg.C-1000 deg.C, and a stage for separating the gallium nitride film from the sapphire substrate by applying a laser beam to the rear of the heated sapphire substrate. Also, a stage for forming a silicon oxide film on the rear of the sapphire substrate at a stage before and after the stage for forming the gallium nitride film on the front of the sapphire substrate, and a stage for removing the silicon oxide film on the rear of the sapphire substrate are added further, thus obtaining the high-quality gallium nitride substrate without generating any cracks.</p> |
