| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique which can improve humidity resistance of a semiconductor device. SOLUTION: After a metallic layer 8a, which constitutes a part of a foundation metal BLM for a CCB bump, is processed by using a resist pattern 13 as a mask, a hydrophobic fluoride layer 12 is formed by plasma processing using fluorine gas in a surface of a PIQ film 9b while leaving the resist pattern 13. Thereby, it is possible to prevent water and humidity out of circumference from permeating into the PIQ film 9b. |
