IMAGE SENSING DEVICE AND ITS OPERATION METHOD

摘要

PROBLEM TO BE SOLVED: To realize spectral sensitivity characteristics and photoelectric conversion characteristics of higher efficiency which are suitable for a color camera, in an image sensing device wherein sensitivity is increased by using avalanche multiplication phenomenon in an amorphous semiconductor layer whose main component is selenium. SOLUTION: A photoelectric conversion part of the image sensing device is constituted of at least a transmissive electrode constituted of a conductive thin film, a positive hole injection obstructing layer, a positive hole injection obstructing auxiliary layer composed of selenium based amorphous semiconductor, a photocarrier generating layer composed of selenium based amorphous semiconductor which includes tellurium of 13-20 wt.% and whose thickness is 0.01-0.2μm, and a carrier multiplication layer which is used for multiplying optical carriers which are photoelectrieally converted and composed of selenium based amorphous semiconductor.