发明名称 CHARGE PUMP CIRCUIT AND ITS CONTROL METHOD
摘要 PROBLEM TO BE SOLVED: To perform charge operation normally, by preventing a parasitic diode from being biased reversely in a charge pump circuit which performs boosting with a small step of Vdd or under in power supply voltage. SOLUTION: This charge pump circuit is provided with a means for biasing the substrate potential of a MOS transistor M2 for control so that a forward current may not flow substantially to a parasitic diode DP1 throughout the all process of charge operation. Specifically, the substrate of the MOS transistor M2 for control is biased with the voltage of a junction between the MOS transistor M2 for control and a capacitor 1, in case that the MOS transistor M2 for control is of p-channel type.
申请公布号 JP2002058237(A) 申请公布日期 2002.02.22
申请号 JP20010159168 申请日期 2001.05.28
申请人 SANYO ELECTRIC CO LTD 发明人 NANO TAKAO
分类号 H01L27/04;H01L21/822;H02M3/07;(IPC1-7):H02M3/07 主分类号 H01L27/04
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