| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a new step and a protective element including a low breakdown voltage, without having to add a photomask, and to provide a method for manufacturing the same. SOLUTION: The semiconductor device comprises a first conductivity-type substrate, an electrostatic protective element made of a second conductivity-type heavily doped diffusion layer formed on a surface of the substrate, a semiconductor element including a source, a drain and a gate electrode,and a concentration first conductivity type diffusion layer of concentration higher than that of the substrate and provided on the entire lower surface of the second conductivity- type heavily doped diffusion layer. A method for manufacturing the semiconductor device is provided.
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