| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for magnetically stabilizing the state of the cell of a magnetic memory cell. SOLUTION: The magneto-resistive memory cell (100) has first (110) and second (130) conductive magnetic layers. One of the first and second layers substantially has the shape of an 'H' or 'I'. A separation layer (120) is arranged between the first layer and the second layer. In various embodiment, the separation layer is conductive or non-conductive. In various embodiments, at least one of the first layer and the second layer consists one of nickel - iron(NeFe), cobalt - iron(CoFe) or nickel - iron - cobalt(NiFeCo) alloy. In one embodiment, a memory cell device has a conductive magnetic reference layer and data layer. The shape of the data layer (400) is substantially the 'H' or 'I' shape. The separation layer is arranged between the reference layer and the data layer. The cell may be made into a tunnel magneto-resistive cell or megaromagneto-resistive cell.
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