METHOD OF CHEMICAL MECHANICAL POLISHING OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a method of reducing flaws generated in a chemical mechanical polishing process to prevent a short. SOLUTION: There is provided a semiconductor substrate having a first dielectric layer on a surface thereof. The first dielectric layer is subjected to a chemical mechanical polishing process. A second dielectric layer, of which material is the same as that of the first dielectric layer, is deposited on the wafer surface.