| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can form a resist pattern having small linewidth fluctuations on a transparent film. SOLUTION: In the method for manufacturing a semiconductor device, a resist film 14 is coated on a silicon substrate 11 through a pad oxide film 12 and a silicon nitride film 13, and then the resist film 14 is subjected to a lithography process to form a resist pattern. In an allowable thickness range of the flat-surfaced silicon nitride film 13 and in an allowable thickness range of the flat-surfaced resist film 14, optimum values of the thicknesses of the films 13 and 14 are selected so that the resist pattern have optimal film thickness. |
