| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor device for improving adhesibility between a BPSG film and a resist, suppressing penetration of etchant into an interface and eliminating etching defects. SOLUTION: A BPSG film 2 as an inter-planarized insulating film is used on a metal wiring 11 in a Si wafer WF, as shown in Fig. (a). Then, although a system moves to a lithographic process, where a contact part with the metal wiring of an upper layer is formed. A cleaning process by a mixed liquid of sulfuric acid and hydrogen peroxide water, whose of specific gravity of sulfuric acid is 1.6 to 1.75 with respect to the PGSG film 12, as a pretreatment is inputted. Then, isotropic wet etching shown in Fig. (b) and dry etching as anisotropic etching shown in Fig.(c) are performed through the application of resist 13 and the formation of a resist pattern PTN.
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