| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for efficiently simulating characteristic unevenness of a semiconductor device due to an impurity perturbation and a computer readable recording medium recording a program for executing the method. SOLUTION: The method for simulating the semiconductor device using a Monte Carlo method comprises the step of calculating scattering probability of a carrier in the device, by using a correlation function of a potential generated by an impurity doped in the device.
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