POLISHING PAD FOR CMP

摘要

PROBLEM TO BE SOLVED: To provide a polishing pad for CMP at low cost which has favorable frictional property and excellent durability and does not cause a flaw or scratch on a machined surface of a semiconductor wafer. SOLUTION: This polishing pad for CMP has a base material and a polishing layer provided on the base material. The polishing layer has a three-dimensional structure constituted by a plurality of regularly arranged three-dimensional elements in a predetermined shape. The polishing layer is made of a polishing composite containing advanced alumina abrasive grains prepared by the CVD method and a binder as components.