INSULATING NITRIDE LAYER AND ITS FORMATION METHOD, AND SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a nitride layer of high resistance and excellent insulation property which is suitable for III-V compound semiconductor device consisting of nitride and enables electrically good isolation while restraining lowering of conductivity of an active layer, and its formation method, and furthermore to improve characteristic of a semiconductor device by using the nitride layer. SOLUTION: An insulating nitride layer 3c is formed by doping a III-V compound semiconductor consisting of nitride mainly with IIB group element (especially, Zn) at a high density of 1×1017/cm3 or more. The semiconductor device such as AlGaN/GaN HEMT has the nitride layer below a GaN active layer 4.