| 摘要 |
PROBLEM TO BE SOLVED: To improve the characteristics an element which is low due to the crystallinity in a multiplication layer. SOLUTION: This method has steps comprising a step of sequentially forming a multiplying layer and an optical absorption layer on a first substrate, via an etching stopper layer to epitaxially grow the multiplying layer and the optical absorption layer; a step of removing the first substrate; a step of forming a second substrate on the optical absorption layer, on the opposite side to a side in which the first substrate is removed; and a step of carrying out ion implantation from a side, in which the first substrate is removed, to form a guard ring.
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