| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high protection capability against an overvoltage and an effective wide area for a power element. SOLUTION: The semiconductor device comprises a power element section having a plurality of drain cells 60, a gate electrode 28 and a plurality of unit cells (replaceable cells) 64 disposed between the adjacent drain cells via a gate electrode on the same semiconductor base (semiconductor supporting substrate), and an overvoltage protective circuit disposed on the substrate different from the base to sense the overvoltage applied to the drain cell to set the power element section of an off state to an on state. In this device, at least one of the plurality of the unit cells is a Zener cell 62 for constituting a Zener diode between the drain cells, and the residual unit cell is a source cell 61 in which a resistance between the drain cells is controlled by a voltage applied to the gate electrode.
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