| 摘要 |
PROBLEM TO BE SOLVED: To enable manufacturing of an SOI-MOSFET of an FB type without largely increasing steps having a structure capable of suppressing a parasitic bipolar transistor operation and hence for reducing occurrence of soft errors. SOLUTION: A semiconductor device comprises source regions S1, S2, S3, and the like having source region extended parts S11, S12, S13, and the like extended to parts to become void spaces formed in a layout, by maintaining a depth not reaching an embedded insulating layer of an SOI substrate without obstructing the manufacturing process.
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