| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser and a semiconductor device, in which laser light polarization characteristics can be enhanced by relaxing stresses caused by the difference between the coefficients of thermal expansion and that of a mounting board and the reliability can be enhanced. SOLUTION: The semiconductor laser comprises a substrate 10, on which a stripe mesa protrusion 10a is formed, multilayer semiconductor body comprising a first conductivity-type first clad layer 11, active layer 12 and a second conductivity-type second clad layer 13 formed on the mesa protrusion 10a, and first conductivity-type current block layer 15 formed on the opposite side faces of the active layer 12 to touch the active layer 12 across the total thickness thereof, first electrode 20 formed on the upper layer of the multilayer semiconductor body, and second electrode 30 formed on the rear surface of the substrate wherein a level difference H caused by the height of the mesa protrusion 10a is formed on the surface of the multilayer semiconductor body and the first electrode 20 comprises a multilayer film, where two Pt layers (25, 27) sandwich a stress relax layer, i.e., Au layer 26, or an anti-alloying film of Pt layer.
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