| 摘要 |
PURPOSE: A BE-SE laser diode is provided to reduce defects at an interface between a substrate and a clad layer and a diffusion appearance of the defects. CONSTITUTION: A laser oscillation layer is formed on a substrate(2a) and has an active layer(2d) and clad layers formed at upper and lower surfaces of the active layer. An electrode means applies a voltage to the laser oscillator layer. The substrate(2a) is an n-type silicon substrate, the clad layers(2b,2f) are a Zn-Be-S-Se layer, and the active layer(2a) is a Be-Se layer. An n-type Be-Zn-Se-S waveguide layer(2c) is formed between the active layer and the clad layer(2b).
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