SEMICONDUCTOR CAPABLE OF DECREASING JUNCTION LEAKAGE CURRENT AND NARROW WIDTH EFFECT AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A semiconductor capable of decreasing a junction leakage current and a narrow width effect is provided to decrease an electric field caused by a voltage applied to a junction region of a cell transistor while maintaining a high threshold voltage of a field transistor to separate unit cells from each other by forming a channel stop impurity region only under an isolation region and making the channel stop impurity region not formed under the junction region. CONSTITUTION: An active region and an isolation region having a trench are defined in a semiconductor substrate(21). A spacer(31a) is formed on both sidewalls of the trench. The channel stop impurity region(33a) is locally formed only on the bottom of the isolation region, self-aligned with the spacer. An isolation layer(35) is filled in the trench. A gate pattern(37) is formed on the isolation layer and the active region.