| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of misoperations due to coupling capacitance because the specific gravity of the capacitance occupying the overall capacity of bit lines is increased by a constitution of metal wirings of the same layer as that of the bit lines in conventional semiconductor memory devices. SOLUTION: A semiconductor memory device comprises a plurality of memory cells 1i arranged into a matrix form, and a plurality of bit lines 4i extended along the cells 1i arranged in a longitudinal direction. In this device, each bit line 4i has a wiring part of an upper layer (4AL) and a wiring part of a lower layer (3AL), and the wiring parts of different layers are disposed at mutually adjacent sites between the adjacent bit lines 4i. |
