| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can form an upper electrode and a gate electrode, which have desired patterns, and to provide the manufacturing method. SOLUTION: The manufacturing method of the semiconductor device includes a process (a) for simultaneously forming the upper electrode 130 in a capacitive element 100 and the gate electrode 240 in a field effect transistor 200. The process (a) includes a process (a-1) for forming a conductive layer 40 for the upper electrode 130 and the gate electrode 240, a process (a-3) for forming a patterned resist layer R2 on the conductive layer 40 and a process (a-4) for removing a prescribed part of the conductive layer 40 and forming the upper electrode 130 and the gate electrode 240 with the resist layer R2 as a mask. |
