| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage in which a defective mode being potentialized can be revealed by an acceleration test, even after replacement is performed by a redundancy memory cell. SOLUTION: A redundancy discriminating section 1200.0 stores previously a defective memory cell address in a regular memory cell array, and selects a redundancy memory cell instead of the regular memory cell in a normal operation mode. The redundancy discriminating section 1200.0 selects a specified redundancy memory cell row in accordance with an address signal when a test mode signal TM and a redundancy control signal RAr are in an activated state. On the other hand, when a signal TM is in an activated state and a signal RAr is in a non-activated state, replacement operation of the regular memory cell and the redundancy memory cell is stopped.
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