| 摘要 |
PROBLEM TO BE SOLVED: To eliminate increase in junction capacitance and disadvantages in microminiaturization by having a high concentration impurity layer interposed between two gates in a MOSFET. SOLUTION: An interval between the two gates 6 is made narrower; sidewalls 8 are connected between the gates 6; and an insulating film (NSG) 8 is interposed, so that a high concentration impurity layer (n+-type) is formed on a substrate (P-type well) 2 between the gates 6.
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