| 摘要 |
PROBLEM TO BE SOLVED: To prevent surely rapid deterioration process of fuse/anti-fuse and unexpected burnout of fuse/anti-fuse being never burned out hitherto in reading out fuse/anti-fuse of a semiconductor memory assembly such as especially a DRAM. SOLUTION: In reading out of fuse/anti-fuse, voltage Vb1h deciding a high potential of a bit line BL of a memory cell array 6 is used instead of internal voltage Vint being general hitherto. The voltage Vb1h is reduced for the internal voltage Vint, especially, it is preferable that voltage Vb1h is reduced by almost 20% to 30% for the internal voltage Vint. |
