| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can prevent generation of failure and reduce manufacturing cost, and a method for manufacturing the semiconductor device. SOLUTION: This semiconductor device is provided with a capacitor electrode 22, an insulating film 23 and a wiring layer 26a. The capacitor electrode 22 is formed on a semiconductor substrate 1. The insulating film 23 is formed on the capacitor electrode 22, has a trench 25a with which a part of the capacitor electrode 22 is exposed, and has an upper surface. The inside of the trench 25a is filled with the wiring layer 26a, has an upper surface, and is connected with the capacitor electrode 22. The upper surface of the wiring layer 26a is positioned almost on the same plane as the upper surface of the insulating film 23. |
