发明名称 |
Method for forming a trench in a semiconductor substrate |
摘要 |
A method for forming a trench in a semiconductor substrate includes configuring a mask on the substrate. The mask has a window in which a substrate surface is uncovered. The substrate is electrochemically etched proceeding from the substrate surface. A porous substrate is formed in a trench-shaped region proceeding from the substrate surface. The trench is formed by removing the porous substrate from the trench-shaped region.
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申请公布号 |
US2002022338(A1) |
申请公布日期 |
2002.02.21 |
申请号 |
US20010917554 |
申请日期 |
2001.07.27 |
申请人 |
KIRCHHOFF MARKUS |
发明人 |
KIRCHHOFF MARKUS |
分类号 |
H01L21/306;H01L21/311;H01L21/334;H01L21/8242;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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