| 摘要 |
<p>The invention relates to a semiconductor device which can be controlled by means of a field effect. Said device contains a semiconductor body (100) comprising a doped first and second contact area (20, 22, 24, 30) to which connecting electrodes (90, 92) for applying power supply potential are connected. A first control electrode (40, 42, 44; 48, 49) is insulated in relation to the semiconductor body (100; 200) and can be connected to a first control potential. A second control electrode (60, 62, 64; 66, 68; 67, 69; 61, 63) is arranged adjacently in relation to the first control electrode (40, 42, 44; 48, 49). Said second control electrode is arranged in the semiconductor body in an insulated manner and can be connected to a second control potential.</p> |
