Semiconductor device for dynamic random access memory

摘要

The semiconductor device includes two conductive layers (15a,b), an intermediate insulation film (23), and a connection layer (4). The conductive layers are separated on an over layer of a semiconductor substrate (13). A contact hole (10) exposes the initial layer (15a) and is formed in the intermediate insulating film on the substrate. The contact hole is filled by the coupling layer (4) and contacts the initial conductive layer. The level of the coupling layer surface is the same, or lower than the surface of the intermediate insulating film. The surface of the coupling layer is covered by an insulating film (5). A further contacting hole (9) exposes the surface of the latter conductive layer (15b) and is filled with another coupling layer (6), which contacts the latter conductive layer.