| 摘要 |
The present invention provides a method for wiring, which plugs conductive material sufficiently into a via hole produced in dielectronics (hereinafter, referred to as "a via hole") and prevents generating a void. The via hole is made through a via hole patterning step and a cleaning step. At a surface treatment step, substance having chemical affinity (active site) is adsorbed to the surface of the via hole. Next, an electron donative layer is made by depositing substance having an electron donative characteristic on the active sites acting as cores at an electron donative layer formation step. Then, the wiring material is plugged at a via hole plug step.
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