发明名称 Read device and read method for semiconductor memory
摘要 It is judged whether or not the output voltages of a memory cell and a first reference cell, which is for outputting a voltage at a first reference level to be compared with the output voltage of the memory cell, have reached their respective comparable levels, on the basis of the output voltages of first to third reference cells. After voltage values which can be compared with each other are obtained, the comparison result of the output voltage of the memory cell with the output voltage of the first reference cell is stored in a first latch circuit as the stored data of the memory cell, and the data is output via an output buffer. Thus, even when a reduction of an internal power supply voltage occurs, the data stored in the memory cell can be properly output.
申请公布号 US2002021588(A1) 申请公布日期 2002.02.21
申请号 US20000746072 申请日期 2000.12.26
申请人 FUJITSU LIMITED 发明人 HOMMA YOSHIKAZU
分类号 G11C17/00;G11C11/4093;G11C11/56;G11C16/06;G11C16/28;G11C16/30;G11C17/18;(IPC1-7):G11C5/00 主分类号 G11C17/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利