摘要 |
It is judged whether or not the output voltages of a memory cell and a first reference cell, which is for outputting a voltage at a first reference level to be compared with the output voltage of the memory cell, have reached their respective comparable levels, on the basis of the output voltages of first to third reference cells. After voltage values which can be compared with each other are obtained, the comparison result of the output voltage of the memory cell with the output voltage of the first reference cell is stored in a first latch circuit as the stored data of the memory cell, and the data is output via an output buffer. Thus, even when a reduction of an internal power supply voltage occurs, the data stored in the memory cell can be properly output.
|